Interference-based molecular transistors
نویسندگان
چکیده
منابع مشابه
Interference-based molecular transistors
Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron transport through the highest occupied molecular orbital and the lowest unoccupied molecular orbital of a single molecule. Quantum interference results in a subth...
متن کاملQuantum-interference-controlled three-terminal molecular transistors based on a single ring-shaped molecule connected to graphene nanoribbon electrodes.
We study molecular transistors where graphene nanoribbons act as three metallic electrodes connected to a ring-shaped 18-annulene molecule. Using the nonequilibrium Green function formalism combined with density functional theory, recently extended to multiterminal devices, we show that these nanostructures exhibit exponentially small transmission when the source and drain electrodes are attach...
متن کاملPhonon exacerbated quantum interference effects in III-V nanowire transistors
In recent years, a great deal of attention has been focused on the development of quantum wire transistors as a means of extending Moore’s Law. Here we present, results of fully three-dimensional, self-consistent quantum mechanical device simulations of InAs tri-gate nanowire transistor (NWT). The effects of inelastic scattering have been included as real-space self-energy terms. We find that t...
متن کاملQuantum modeling of light absorption in graphene based photo-transistors
Graphene based optical devices are highly recommended and interested for integrated optical circuits. As a main component of an optical link, a photodetector based on graphene nano-ribbons is proposed and studied. A quantum transport model is presented for simulation of a graphene nano-ribbon (GNR) -based photo-transistor based on non-equilibrium Green’s function method. In the proposed model a...
متن کاملConduction coefficient modeling in bilayer graphene based on schottky transistors
Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Scientific Reports
سال: 2016
ISSN: 2045-2322
DOI: 10.1038/srep33686